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  data sheet semiconductor http://www.yeashin.com 1 rev.02 20120705 9012p-q-r-s general purpose transistors pnp silicon maximum ratings symbol value unit collector-emitter voltage v ceo 20 v collector-base voltage v cbo 40 v emitter-base voltage v ebo 5v collector current-continuoun ic 500 madc thermal charateeristics symbol max unit total device dissipation fr-5 board, p d 225 mw 1.8 mw/ o c thermal resistance, junction to ambient r ja 556 o c / w p d 300 mw 2.4 mw/ o c thermal resistance, junction to ambient r ja 417 o c / w junction and storage temperature tj ,tstg -55 to +150 o c device marking electrical characteristics (t a =25 o c unless otherwise noted) symbol min typ max unit off characteristics collector-emitter breakdown voltage v (br)ceo 20 - - v (i c =1.0ma) emitter-base breakdown voltage v (br)ebo 5- - v (i e =100 collector-base breakdown voltage v (br)cbo 40 - - v (i c =100 a) collector cutoff current (v cb =35v) i cbo --150na emitter cutoff current (v be =4v) i ebo 150 na characteristic total device dissipation derate above 25 o c rating t a =25 o c derate above 25 o c alumina substrate, t a =25 o c characteristic sot-23 (to-236ab) 2 emitter 3 collector 1 base a) feature ordering information device shipping sot-23 package 9012p=12p 9012q=12q 9012r=12r 9012S=12s we declare that the material of product compliance with rohs requirements. 9012x 3000/tape&reel h
http://www.yeashin.com 2 rev.02 20120705 9012p-q-r-s on characteristics dc current gain (i c =50ma, v ce =1v) h fe 100 - 600 collector-emitter saturation voltage (i c =500ma,i b =50ma) v ce(s) --0.6v note: * p q r s h fe 100~200 150~300 200~400 300~600 d j k l a c b s h g v 3 1 2 dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0180 0.0236 0.45 0.60 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.0984 2.10 2.50 v 0.0177 0.0236 0.45 0.60 pin 1. base 2. emitter 3. collector mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 solder plating. 2. lead thickness specified per l / f drawing with 1. controlling dimension: millimeters notes: sot-23 (to-236ab) package outline & dimensions


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